IRF640NSTRLPBF N-Channel MOSFET, 200V drain-source breakdown voltage, 18A continuous drain current at 25°C, 150mOhm on-resistance at 11A and 10V gate drive. Surface mount D2PAK package.
Mfr Part #:

IRF640NSTRLPBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 200V drain-source breakdown voltage, 18A continuous drain current at 25°C, 150mOhm on-resistance at 11A and 10V gate drive. Surface mount D2PAK package.
✓ Total Stock: 5,256 pcs
$ Price Range: $0.60 - $2.12

IRF640NSTRLPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,656 pcs
3656 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,600 pcs
1600 pcs On Request 1 On Request On Request On Request On Request On Request

IRF640NSTRLPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF640NSTRLPBF Description

Short technical summary and product information.

IRF640NSTRLPBF is an N-Channel Power MOSFET from Infineon Technologies (formerly International Rectifier) utilizing advanced HEXFET® process technology. It is rated for a drain-source voltage of 200V and continuous drain current of 18A at 25°C case temperature. The device features a maximum on-resistance of 150mOhm at 11A and 10V gate drive, with a typical gate threshold voltage of 4V. The gate charge is 67nC at 10V, and input capacitance is 1160pF at 25V drain-source.

 

The MOSFET is designed for fast switching applications with dynamic dv/dt rating and fully avalanche rated up to 247mJ single pulse avalanche energy. It operates over a junction temperature range of -55°C to 175°C, with maximum power dissipation of 150W at 25°C case temperature. The device is offered in the surface mount D2PAK (TO-263) package, suitable for high current applications due to low internal resistance.

 

Typical applications include switch-mode power supplies, motor control, and power management circuits. The part is Pb-free and listed as RoHS3 compliant and REACH unaffected.

IRF640NSTRLPBF Quick Information

Product Type: MOSFET
Series: HEXFET
Canonical Name: IRF640NSTRLPBF
Subcategory: Single N-Channel

IRF640NSTRLPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRF640NSTRLPBF Estimated Pricing

Qty Low High
1+ $2.12 $2.12
10+ $1.35 $1.35
50+ $1.02 $1.02
100+ $0.91 $0.91
800+ $0.68 $0.68
2,400+ $0.60 $0.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF640NSTRLPBF Features

  • 200V drain-source breakdown voltage.
  • 18A continuous drain current.
  • 150mOhm on-resistance at 10V gate drive.
  • 175°C maximum operating junction temperature.
  • Surface mount D2PAK package.

IRF640NSTRLPBF Applications

  • Ideal for switch-mode power supplies.
  • Used in motor control circuits.
  • Suitable for high-power DC-DC converters.
  • Designed for fast switching applications.

IRF640NSTRLPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF640NSTRLPBF?

200V.

What package is the IRF640NSTRLPBF available in?

D2PAK (TO-263) surface mount package.

What is the operating temperature range of the IRF640NSTRLPBF?

-55°C to 175°C junction temperature.

Is the IRF640NSTRLPBF RoHS compliant?

It is listed as RoHS3 compliant, but this information is unverified.

What is the continuous drain current rating?

18A at 25°C case temperature.

What is the on-resistance of the IRF640NSTRLPBF?

Maximum 150mOhm at 11A and 10V gate drive.

What is the gate charge of the IRF640NSTRLPBF?

67nC at 10V gate voltage.

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