| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF640NSPBF from Vishay is a single N-channel power MOSFET utilizing HEXFET technology. It is rated for a drain-to-source voltage (Vds) of 200V and a continuous drain current (Ids) of 18A. The device exhibits a low on-resistance (Rds) of 0.15 ohms at a threshold voltage of 4V, contributing to efficient operation.
With a power dissipation rating of 150W, the IRF640NSPBF is suitable for various power applications. It operates within a temperature range of -55°C to 175°C. The MOSFET features fast switching characteristics with a rise time of 19ns and a fall time of 5.5ns, along with an input capacitance of 1160pF.
Packaged in a TO-263-3 surface mount case, this component is designed for ease of integration into electronic circuits. Its N-channel polarity and silicon material make it a versatile choice for power management and switching tasks in industrial and commercial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) for the IRF640NSPBF is 200V.
The continuous drain current (Ids) for the IRF640NSPBF is 18A.
The on-resistance (Rds) for the IRF640NSPBF is 0.15 ohms.
The power dissipation rating for the IRF640NSPBF is 150W.
The operating temperature range for the IRF640NSPBF is -55°C to 175°C.
The IRF640NSPBF is supplied in a TO-263-3 surface mount package.