| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,500 pcs
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4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF640NSPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power switching applications.
With a drain-source breakdown voltage of 200V and continuous drain current of 18A at 25°C (13A at 100°C), this MOSFET can handle significant power. The maximum on-resistance is 150mΩ at 11A and 10V gate drive. Gate threshold voltage ranges from 2V to 4V. The device also features a maximum power dissipation of 150W at 25°C case temperature.
The MOSFET has a maximum input capacitance of 1160pF at 25V and total gate charge of 67nC at 10V, enabling fast switching. It is avalanche rated with single pulse avalanche energy of 247mJ and repetitive avalanche energy of 15mJ. Operating temperature range is -55°C to 175°C.
The device is supplied in a D2PAK (TO-263) surface mount package with gull wing leads. It is lead-free (PbF suffix) and RoHS compliant (unverified). The D2PAK package allows for efficient heat dissipation in surface mount designs.
200V minimum breakdown voltage.
D2PAK (TO-263) surface mount package.
-55°C to 175°C junction temperature.
RoHS3 compliant (unverified). The part number suffix PbF indicates lead-free.
18A at 25°C case temperature with 10V gate drive.
2V to 4V at ID=250µA.
150W at 25°C case temperature.