| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,420 pcs
|
2420 pcs | On Request | 1 | On Request | On Request | 1542+ | On Request | On Request | |
|
71 pcs
|
71 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale IRF640NS is an N-Channel Power MOSFET belonging to the HEXFET family, known for its fast switching speed and rugged design. This device offers a breakdown voltage of 200V and a continuous drain current rating of 18A, making it suitable for a wide range of applications.
Key electrical characteristics include a maximum RDS(on) of 150mΩ and an input capacitance of 1.16nF. The MOSFET also exhibits a rise time of 19ns and a fall time of 5.5ns, contributing to its efficient switching performance.
With a maximum power dissipation of 150W, the IRF640NS is designed for applications requiring robust power handling. It operates within a temperature range of -55°C to 150°C.
The component is housed in a D2PAK package and is designed for surface mounting. This package type is commonly used in commercial-industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 200V.
The continuous drain current rating is 18A.
The maximum RDS(on) is 150mΩ.
The maximum power dissipation is 150W.
The operating temperature range is -55°C to 150°C.
The IRF640NS is available in a D2PAK package.
The IRF640NS is designed for surface mounting.