IRF640NPBF N-Channel Power MOSFET, 200V drain-source breakdown voltage, 18A continuous drain current, with 150mΩ on-resistance. Available in TO-220AB through-hole package.
Mfr Part #:

IRF640NPBF

Available from 3 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel Power MOSFET, 200V drain-source breakdown voltage, 18A continuous drain current, with 150mΩ on-resistance. Available in TO-220AB through-hole package.
✓ Total Stock: 36,444 pcs
$ Price Range: $0.81 - $2.34

IRF640NPBF Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
35,000 pcs
35000 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
1,414 pcs
1414 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
30 pcs
30 pcs On Request 1 On Request On Request On Request On Request On Request

IRF640NPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF640NPBF Description

Short technical summary and product information.

Fifth Generation HEXFET® Power MOSFET from Infineon Technologies (formerly International Rectifier) utilizing advanced processing for low on-resistance per silicon area. This device offers fast switching speed and ruggedized design.

 

The TO-220 package is preferred for commercial-industrial applications at power dissipation levels up to approximately 50 watts. The low thermal resistance and low package cost contribute to wide acceptance. Fully avalanche rated with dynamic dv/dt rating.

 

Key specifications: Vdss=200V, Id=18A at Tc=25°C, Rds(on)=150mΩ max at Vgs=10V, Id=11A. Gate charge 67nC, input capacitance 1160pF. Power dissipation 150W at Tc=25°C. Maximum junction temperature 175°C. Lead-free and RoHS compliant (unverified).

IRF640NPBF Quick Information

Product Type: N-Channel Power MOSFET
Canonical Name: IRF640NPBF N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

IRF640NPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRF640NPBF Estimated Pricing

Qty Low High
1+ $2.34 $2.34
10+ $1.49 $1.49
50+ $1.13 $1.13
100+ $1.01 $1.01
500+ $0.81 $0.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF640NPBF Features

  • 200V drain-source breakdown voltage.
  • 18A continuous drain current at 25°C.
  • 150mΩ maximum on-resistance.
  • Fully avalanche rated for ruggedness.
  • 175°C maximum junction temperature.

IRF640NPBF Applications

  • Power supply switching circuits.
  • Motor drive applications.
  • DC-DC converter designs.
  • Avalanche-rated for harsh environments.
  • Through-hole mounting for easy assembly.

IRF640NPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IRF640NPBF?

200 V minimum.

What is the maximum continuous drain current?

18 A at Tc=25°C, 13 A at Tc=100°C.

What is the on-resistance?

150 mΩ maximum at Vgs=10V, Id=11A.

What is the operating temperature range?

-55°C to 175°C (junction temperature).

What package type is available?

TO-220-3 (TO-220AB) through-hole.

Is the device RoHS compliant?

The device is marked as RoHS3 compliant, but this status is unverified. Datasheet indicates lead-free.

What is the gate charge?

67 nC maximum at Vgs=10V.

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