| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,593 pcs
|
3593 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
70 pcs
|
70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The IRF640N is a power MOSFET designed for switching applications. It features a drain current of 18A at 25°C, a maximum power dissipation of 150W, and a drain-source voltage rating of 200V. Its low on-resistance of 150 milliohms at 10V gate drive makes it suitable for high-current switching circuits. The device is packaged in a TO-220 package, which is compatible with through-hole mounting. It is RoHS3 compliant, has an unlimited moisture sensitivity level, and is unaffected by REACH regulations. The IRF640N is used in power supplies, motor control, and load switching circuits where high current and voltage ratings are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds max) is 200 V.
The drain current (ID) at 25°C is 18 A.
The IRF640N is packaged in a TO-220 package.
Yes, it is RoHS3 compliant.
The maximum power dissipation is 150 W.