IRF640LPBF N-Channel 200V 18A Power MOSFET in through-hole TO-262-3 (I2PAK) package with low 180mOhm maximum on-resistance.
Mfr Part #:

IRF640LPBF

Available from 1 distributors
Mfr Name: Vishay
Vishay
N-Channel 200V 18A Power MOSFET in through-hole TO-262-3 (I2PAK) package with low 180mOhm maximum on-resistance.
✓ Total Stock: 2,970 pcs
$ Price Range: $1.28

IRF640LPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,970 pcs
2970 pcs On Request 1 On Request On Request 05+ On Request On Request

IRF640LPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF640LPBF Description

Short technical summary and product information.

The IRF640LPBF is a third-generation N-Channel power MOSFET from Vishay Siliconix. It is designed for fast switching and rugged operation, offering a drain-source voltage rating of 200 V and a continuous drain current of 18 A at 25 °C case temperature. The device features a maximum on-resistance of 180 milliohms at Vgs = 10 V, ensuring low conduction losses in high-current applications.

 

This MOSFET is fully avalanche rated with a single-pulse avalanche energy capability of 580 mJ. It also provides a peak diode recovery dV/dt rating of 5.0 V/ns, enhancing its robustness in inductive switching environments. The maximum gate charge is 70 nC at Vgs = 10 V, supporting efficient gate drive design.

 

The IRF640LPBF is housed in a through-hole TO-262-3 (I2PAK) package, compatible with low-profile mounting applications. It operates across a junction temperature range of -55 °C to +150 °C. The device is RoHS3 compliant and lead-free, making it suitable for environmentally conscious designs.

IRF640LPBF Quick Information

Product Type: Power MOSFET
Series: IRF640
Canonical Name: IRF640LPBF N-Channel MOSFET
Subcategory: N-Channel MOSFET

IRF640LPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IRF640LPBF Estimated Pricing

Qty Low High
1,000+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF640LPBF Features

  • N-Channel 200V 18A Power MOSFET.
  • Low on-resistance of 180 milliohms maximum.
  • Fast switching with 70 nanocoulomb gate charge.
  • Fully avalanche rated at 580 millijoules.
  • Through-hole TO-262-3 package for low-profile mounting.

IRF640LPBF Applications

  • Switching power supplies and DC-DC converters.
  • Motor control and drive circuits.
  • UPS and battery charging systems.
  • High-current load switching applications.
  • Automotive and industrial power management.

IRF640LPBF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRF640LPBF?

The maximum drain-source voltage (Vdss) is 200 V.

What is the continuous drain current rating at 25 °C?

The continuous drain current is 18 A at 25 °C case temperature.

What is the operating temperature range?

The junction operating temperature range is -55 °C to 150 °C.

Is the IRF640LPBF RoHS compliant?

Yes, the IRF640LPBF is RoHS3 compliant and lead-free (PbF suffix).

What package is the IRF640LPBF available in?

It is available in a through-hole TO-262-3 (I2PAK) package.

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