| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,356 pcs
|
2356 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF640FP is an N-Channel enhancement-mode MOSFET manufactured by STMicroelectronics using MOSFET (Metal Oxide) technology. It is designed for high-efficiency power switching applications.
Key electrical characteristics include a maximum drain-to-source voltage of 200 V and a continuous drain current of 18 A at Tc=25°C. The device features a low on-resistance of 180 mOhm maximum at Vgs=10 V and Id=9 A. Gate charge is 72 nC at Vgs=10 V, and input capacitance is 1560 pF at Vds=25 V. The gate threshold voltage is 4 V maximum at Id=250 µA, with a maximum gate-source voltage rating of ±20 V.
The MOSFET can dissipate up to 40 W at Tc=25°C and has a maximum junction temperature of 150°C. It is offered in a TO-220-3 Full Pack (TO-220FP) through-hole package, suitable for PCB mounting with a standard three-lead configuration.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.08 | $1.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200 V.
TO-220-3 Full Pack (TO-220FP) through-hole package.
150°C.
RoHS3 Compliant (unverified).
180 mOhm maximum at Vgs=10V and Id=9A.
72 nC at Vgs=10V.
1560 pF at Vds=25V.