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IRF640B The Vishay Dale IRF640B is an N-Channel enhancement mode power MOSFET. It offers a 200V breakdown voltage and a maximum power dissipation of 139W.
Mfr Part #:

IRF640B

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale IRF640B is an N-Channel enhancement mode power MOSFET. It offers a 200V breakdown voltage and a maximum power dissipation of 139W.
✓ Total Stock: 1,550 pcs
$ Price Range: $1.67

IRF640B Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
1,550 pcs
On Request
1550 pcs On Request 1 On Request On Request 0215+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRF640B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IRF640B Description

Short technical summary and product information.

The IRF640B from Vishay Dale is an N-Channel enhancement mode power field-effect transistor. It utilizes Fairchild’s proprietary planar DMOS technology, optimized for low on-state resistance and superior switching performance.

 

Key electrical specifications include a minimum breakdown voltage of 200V and a minimum drain-source resistance of 180mΩ. The device can handle a maximum power dissipation of 139W and operates up to a maximum temperature of 150°C.

 

This MOSFET is designed to withstand high energy pulses in avalanche and commutation modes, making it suitable for various power switching applications. Its advanced technology ensures efficient operation and reliability in demanding environments.

 

Further details regarding package type, mounting, and specific application suitability would typically be found in the manufacturer's datasheet.

IRF640B Quick Information

Product Type: MOSFET
Canonical Name: IRF640B N-Channel MOSFET
Subcategory: N-Channel MOSFET

IRF640B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF640B Estimated Pricing

Qty Low High
1+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF640B Features

  • N-Channel enhancement mode power MOSFET.
  • 200V minimum breakdown voltage.
  • 139W maximum power dissipation.
  • 150°C maximum operating temperature.
  • Optimized for low on-state resistance.

IRF640B Applications

  • Suitable for power switching circuits.
  • Designed for high energy pulse handling.
  • Utilizes advanced planar DMOS technology.
  • Efficient and reliable power conversion.

IRF640B FAQs

7 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the IRF640B?

The minimum breakdown voltage for the IRF640B is 200V.

What is the maximum power dissipation for the IRF640B?

The maximum power dissipation for the IRF640B is 139W.

What is the maximum operating temperature for the IRF640B?

The IRF640B can operate up to a maximum temperature of 150°C.

What is the minimum drain-source resistance of the IRF640B?

The minimum drain-source resistance of the IRF640B is 180mΩ.

What is the RoHS status of the IRF640B?

The IRF640B is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IRF640B?

The Moisture Sensitivity Level (MSL) for the IRF640B is 1 Unlimited.

What is the REACH status for the IRF640B?

The REACH status for the IRF640B is REACH Unaffected.

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