| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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112 pcs
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112 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Minos IRF640 is a versatile N-Channel MOSFET housed in a TO-220 package. It is engineered for power switching applications, offering a robust 200V drain-source voltage (Vdss) and a continuous drain current (Id) of 18A. The MOSFET exhibits a low drain-source on-resistance (Rds(on)) of 130mOhm at 10V drain-source voltage and 7.5A drain current, ensuring efficient power transfer.
With a power dissipation (Pd) rating of 31W and an operating temperature range from -55°C to +150°C, the IRF640 is suitable for demanding environments. Its gate threshold voltage (Vgs(th)) is 4V at 250uA, and it includes typical capacitance values such as input capacitance (Ciss) of 1.32nF at 25V and reverse transfer capacitance (Crss) of 130pF at 25V. The total gate charge (Qg) is 23nC at 10V.
This component is ideal for various power electronics designs where reliable switching and moderate power handling are required. Its standard TO-220 package facilitates easy mounting and integration into circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) of the IRF640 is 200V.
The continuous drain current (Id) for the IRF640 is 18A.
The power dissipation (Pd) of the IRF640 is 31W.
The gate threshold voltage (Vgs(th)) is 4V at 250uA.
The operating temperature range is -55°C to +150°C.
The IRF640 is supplied in a TO-220 package.