| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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| Power Dissipation |
The IRF634A is an Advanced Power MOSFET manufactured by ON Semiconductor. This component is designed for power switching applications and features a maximum breakdown voltage of 250V.
Key electrical characteristics include a minimum drain-source resistance of 450mΩ and a maximum power dissipation of 74W. The maximum operating temperature is rated at 150°C, ensuring reliability in demanding environments.
With 3 terminals, the IRF634A is suitable for various electronic designs requiring efficient power management. Its robust construction and specifications make it a reliable choice for power supply circuits, motor control, and other high-power applications.
The maximum breakdown voltage of the IRF634A is 250V.
The maximum power dissipation for the IRF634A is 74W.
The minimum drain-source resistance of the IRF634A is 450mΩ.
The maximum operating temperature for the IRF634A is 150°C.
The IRF634A has 3 terminals.