IRF630STRLPBF The IRF630STRLPBF is an N-Channel power MOSFET from Vishay, rated for 200V drain-source voltage and 9A continuous drain current. It features a low on-resistance of 400mΩ and comes in a surface-mount D2PAK (TO-263) package.
Mfr Part #:

IRF630STRLPBF

Available from 1 distributors
Mfr Name: Vishay
Vishay
The IRF630STRLPBF is an N-Channel power MOSFET from Vishay, rated for 200V drain-source voltage and 9A continuous drain current. It features a low on-resistance of 400mΩ and comes in a surface-mount D2PAK (TO-263) package.
✓ Total Stock: 5,020 pcs
$ Price Range: $0.76 - $2.59

IRF630STRLPBF Available from 1 distributor

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✓ Non-Authorised
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IRF630STRLPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

IRF630STRLPBF Description

Short technical summary and product information.

The IRF630STRLPBF is an N-Channel power MOSFET from Vishay, rated for a maximum drain-source voltage of 200V and a continuous drain current of 9A at a case temperature of 25°C. It features a maximum on-resistance of 400mΩ at a 10V gate drive with a drain current of 5.4A. The maximum gate threshold voltage is 4V, and the gate-source voltage limit is ±20V. The device typically exhibits a total gate charge of 43nC at Vgs=10V and an input capacitance of 800pF at Vds=25V.

 

This MOSFET is based on third-generation design, offering fast switching, dynamic dv/dt rating, and repetitive avalanche capability. The D2PAK (TO-263) surface-mount package provides low internal connection resistance, making it suitable for high-current applications. The maximum power dissipation is 74W at a case temperature of 25°C and 3W at an ambient temperature of 25°C.

 

The IRF630STRLPBF is supplied with lead-free terminations (PbF code) and is available in tape and reel packaging for automated assembly. It operates over a junction temperature range of -55°C to 150°C, supporting use in industrial and power supply environments.

IRF630STRLPBF Quick Information

Product Type: Power MOSFET
Series: IRF630S
Canonical Name: N-Channel Power MOSFET 200V 9A D2PAK
Subcategory: N-Channel MOSFET

IRF630STRLPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

IRF630STRLPBF Estimated Pricing

Qty Low High
1+ $2.59 $2.59
10+ $1.67 $1.67
50+ $1.27 $1.27
100+ $1.14 $1.14
800+ $0.86 $0.86
2,400+ $0.76 $0.76

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF630STRLPBF Features

  • 200V drain-source voltage rating.
  • 9A continuous drain current rating.
  • Low on-resistance of 400mΩ maximum.
  • D2PAK surface-mount package.
  • Lead-free and RoHS-compliant design.

IRF630STRLPBF Applications

  • Suitable for high-current power switching circuits.
  • Used in fast-switching power conversion applications.
  • Supports parallel operation for higher current ratings.

IRF630STRLPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRF630STRLPBF?

The maximum drain-source voltage (Vds) is 200V.

What is the continuous drain current rating?

The continuous drain current is 9A at Tc=25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 400mΩ at Vgs=10V and Id=5.4A.

What is the package type of the IRF630STRLPBF?

The package type is TO-263-3 (D2PAK), a surface-mount package.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

Is the IRF630STRLPBF RoHS compliant?

Yes, it is listed as RoHS3 compliant and lead-free, though the compliance status in the source database is unverified.

What is the gate threshold voltage?

The maximum gate threshold voltage is 4V at Id=250µA.

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