IRF630SPBF N-Channel power MOSFET rated at 200V drain-source voltage and 9A continuous drain current. Surface-mount D2PAK package with 400mOhm on-resistance at 10V gate drive.
Mfr Part #:

IRF630SPBF

Available from 1 distributors
Mfr Name: Vishay
Vishay
N-Channel power MOSFET rated at 200V drain-source voltage and 9A continuous drain current. Surface-mount D2PAK package with 400mOhm on-resistance at 10V gate drive.
✓ Total Stock: 1,245 pcs
$ Price Range: $0.91 - $2.59

IRF630SPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,245 pcs
1245 pcs On Request 1 On Request On Request 10+ On Request On Request

IRF630SPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF630SPBF Description

Short technical summary and product information.

The IRF630SPBF is an N-Channel power MOSFET from Vishay Siliconix, designed for high-efficiency switching applications. It features a maximum drain-source voltage of 200V and a continuous drain current of 9A at 25°C case temperature. The on-resistance is typically 400mOhm maximum at Vgs=10V and Id=5.4A, enabling low conduction losses. The gate threshold voltage is 4V maximum at Id=250µA, and the device can handle gate-source voltages up to ±20V.

 

This MOSFET offers fast switching performance with an input capacitance of 800pF at Vds=25V and a total gate charge of 43nC at Vgs=10V. It is avalanche rated with a single pulse avalanche energy of 250mJ and repetitive avalanche current of 9A, making it suitable for rugged environments. The operating junction temperature range is -55°C to 150°C.

 

The device is housed in a surface-mount D2PAK (TO-263) package, which provides excellent thermal performance with a maximum power dissipation of 74W at Tc=25°C (or 3W at Ta=25°C on PCB). The package is lead-free and RoHS3 compliant. Typical applications include power supplies, DC-DC converters, motor control, and high-frequency switching regulators.

IRF630SPBF Quick Information

Product Type: Power MOSFET
Series: IRF630S
Canonical Name: IRF630SPBF N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

IRF630SPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Non-Compliant
Lead Free: Yes

IRF630SPBF Estimated Pricing

Qty Low High
1+ $2.59 $2.59
10+ $1.67 $1.67
50+ $1.27 $1.27
100+ $1.14 $1.14
500+ $0.91 $0.91

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF630SPBF Features

  • N-Channel MOSFET with 200V drain-source voltage.
  • Continuous drain current rating of 9A.
  • Low on-resistance of 400mOhm at 10V gate drive.
  • Surface-mount D2PAK package for easy assembly.
  • Avalanche rated for rugged operation.

IRF630SPBF Applications

  • Used in power supply switching circuits.
  • Suitable for DC-DC converter applications.
  • Ideal for motor control and inverter designs.
  • Applicable in high-frequency switching regulators.

IRF630SPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF630SPBF?

200V.

What package is the IRF630SPBF available in?

Surface-mount D²PAK (TO-263) package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the IRF630SPBF RoHS compliant?

Yes, it is RoHS3 compliant.

What is the continuous drain current rating?

9A at 25°C case temperature.

What is the on-resistance of the IRF630SPBF?

400mOhm maximum at Vgs=10V, Id=5.4A.

What is the gate threshold voltage?

4V maximum at Id=250µA.

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