| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
128 pcs
|
128 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF630S is an N-Channel power MOSFET from Vishay Siliconix featuring a drain-source voltage rating of 200 V and a continuous drain current of 9 A at 25°C case temperature. At 100°C the continuous drain current is 5.7 A. It can handle pulsed drain currents up to 36 A.
This MOSFET offers a maximum on-resistance of 400 mOhm at Vgs = 10 V and Id = 5.4 A. The gate charge is 43 nC maximum at Vgs = 10 V. Input capacitance is 800 pF maximum at Vds = 25 V. The device also provides single pulse avalanche energy of 250 mJ and a peak diode recovery dv/dt of 5.0 V/ns.
Packaged in the surface-mount D2PAK (TO-263) package, it is suitable for high-power surface-mount applications. The maximum power dissipation at 25°C case temperature is 74 W; with PCB mounting at 25°C ambient it is 3.0 W. The operating junction and storage temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 50+ | $1.41 | $1.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200 V
9 A continuous, 36 A pulsed
400 mOhm maximum at Vgs=10V and Id=5.4A
Surface-mount D2PAK (TO-263-3)
-55°C to +150°C
The datasheet indicates RoHS-compliant parts exist, but compliance status is low confidence and unverified.
Alternate part numbers include SiHF630S and SiHF630S-GE3 from Vishay Siliconix.