Mfr Part #:

IRF630PBF

Mfr Name: Vishay

IRF630PBF is an N-Channel power MOSFET with a 200V drain-source voltage rating and 9A continuous drain current at TC=25°C. It has a maximum on-resistance of 400mΩ at 10V gate drive, and is available in a TO-220AB package.

✓ Total Stock: 8,300 pcs

$ Price Range: $0.85 - $2.43

IRF630PBF Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	8,220 pcs On Request	8220 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
ADI/AAR OEM Supply ✓ Non-Authorised Inventory information	80 pcs On Request	80 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRF630PBF Description

Short technical summary and product information.

The IRF630PBF is an N-Channel power MOSFET manufactured by Vishay Siliconix, featuring third-generation design for efficient power switching. It is rated for a maximum drain-source voltage of 200V and a continuous drain current of 9A at a case temperature of 25°C.

This device offers a maximum on-resistance of 400mΩ at a gate-source voltage of 10V and a drain current of 5.4A, enabling low conduction losses. The gate threshold voltage is up to 4V, and the gate-source voltage range is ±20V, which simplifies drive circuitry. The pulsed drain current rating is 36A, suitable for demanding transient conditions.

The IRF630PBF comes in a TO-220AB package, which supports power dissipation up to 74W at 25°C and is preferred for commercial and industrial applications. Its fast switching and rugged design make it suitable for power conversion and switching applications.

IRF630PBF Quick Information

Product Type: Power MOSFET

Canonical Name: IRF630PBF N-Channel Power MOSFET

Subcategory: N-Channel MOSFET

IRF630PBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1

REACH Status: Non-Compliant

Lead Free: Yes

IRF630PBF Estimated Pricing

Qty	Low	High
1+	$2.43	$2.43
10+	$1.56	$1.56
50+	$1.18	$1.18
100+	$1.06	$1.06
500+	$0.85	$0.85

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF630PBF Features

Dynamic dV/dt rating for robust switching.
Repetitive avalanche rated for reliability.
Fast switching for efficient operation.
Ease of paralleling for current sharing.
Simple drive requirements for easy design.

IRF630PBF Applications

Suitable for power switching circuits.
Used in commercial and industrial applications.
Handles power dissipation up to 50W.

IRF630PBF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the IRF630PBF?

200 V

What is the continuous drain current at a case temperature of 25°C?

9 A

What is the maximum on-resistance of the IRF630PBF?

400 mΩ at VGS=10V and ID=5.4A

What is the gate threshold voltage of the IRF630PBF?

4 V maximum at ID=250 µA

What is the maximum pulsed drain current?

36 A

What is the gate-source voltage rating?

±20 V

What is the FET type of the IRF630PBF?

N-Channel MOSFET with metal oxide technology

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	9 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V
Industrial Grade	Yes
Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	74W (Tc)
Rds On (Max) @ Id, Vgs	400 mΩ @ 5.4 A, 10 V
SVHC Present	Not Present
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4 V @ 250 µA