| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | 832 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF630NSTRRPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power switching applications.
Key electrical specifications include a drain-source breakdown voltage of 200V, continuous drain current of 9.3A at 25°C case temperature, and a maximum on-resistance of 300mΩ at Vgs=10V and Id=5.4A. The device features a gate threshold voltage of 4V max, total gate charge of 35nC, and input capacitance of 575pF.
The MOSFET is capable of dissipating up to 82W at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C. It is fully avalanche rated with single pulse avalanche energy of 94mJ.
The device is offered in a D2PAK (TO-263) surface mount package, suitable for high current applications. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). The part is lead-free and compatible with standard surface mount assembly processes.
The drain-source breakdown voltage is 200V.
It is available in a D2PAK (TO-263) surface mount package.
The junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 compliant, but this information is unverified.
9.3A at 25°C case temperature.
Maximum 300mΩ at Vgs=10V and Id=5.4A.
Maximum 4V at Id=250µA.