| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF630NS is an N-Channel Power MOSFET from Infineon Technologies, part of the HEXFET family. It is rated for a maximum drain-source voltage of 200V and a continuous drain current of 9.3A at 25°C case temperature. The device features a low on-resistance of 300mΩ (max) at Vgs=10V and Id=5.4A, enabling efficient power handling.
This MOSFET is fully avalanche rated with a single pulse avalanche energy of 94mJ and repetitive avalanche energy of 8.2mJ. It offers fast switching performance with a typical gate charge of 35nC and input capacitance of 575pF. The operating junction temperature range is -55°C to 175°C, and maximum power dissipation is 82W at 25°C case temperature.
The IRF630NS is supplied in a D2PAK (TO-263) surface mount package, suitable for automated assembly. It is designed for high efficiency power conversion applications such as switch-mode power supplies, DC-DC converters, and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 200+ | $1.39 | $1.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 200V.
The IRF630NS is available in a D2PAK (TO-263) surface mount package.
The operating junction temperature range is -55°C to 175°C.
The IRF630NS is listed as RoHS3 compliant, but this information is unverified and should be treated as low confidence.
The maximum gate charge (Qg) at Vgs=10V is 35nC.
The single pulse avalanche energy is 94mJ, and repetitive avalanche energy is 8.2mJ.