IRF630NPBF The Infineon IRF630NPBF is an N-Channel MOSFET designed for various electronic applications. It offers a 200V drain-to-source voltage and a continuous drain current of 9.3A.
Mfr Part #:

IRF630NPBF

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IRF630NPBF is an N-Channel MOSFET designed for various electronic applications. It offers a 200V drain-to-source voltage and a continuous drain current of 9.3A.
✓ Total Stock: 131,349 pcs
$ Price Range: $0.99

IRF630NPBF Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
90,720 pcs
90720 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
30,000 pcs
30000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
10,629 pcs
10629 pcs On Request 1 On Request On Request 21+ On Request On Request

IRF630NPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF630NPBF Description

Short technical summary and product information.

The Infineon IRF630NPBF is a high-performance N-Channel MOSFET belonging to the HEXFET® series. It is designed for applications requiring a 200V drain-to-source voltage and can handle a continuous drain current of up to 9.3A at 25°C, with a maximum power dissipation of 82W.

 

This MOSFET features a low on-resistance of 300mOhm at 5.4A and 10V Vgs, a gate charge of 35nC, and an input capacitance of 575pF. The gate threshold voltage is a maximum of 4V at 250µA. It operates within a temperature range of -55°C to 175°C.

 

Packaged in a standard TO-220AB through-hole configuration, the IRF630NPBF is suitable for various power switching and control circuits. Its robust construction and electrical characteristics make it a reliable component for demanding applications.

 

Environmental compliance includes ROHS3 compliance, MSL 1 (Unlimited), and REACH Unaffected status. The component is manufactured by Infineon Technologies.

IRF630NPBF Quick Information

Product Type: MOSFET
Series: HEXFET®
Canonical Name: Infineon IRF630NPBF N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

IRF630NPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF630NPBF Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF630NPBF Features

  • N-Channel MOSFET with 200V Vdss.
  • Continuous drain current of 9.3A.
  • Maximum power dissipation of 82W.
  • Through-hole TO-220AB package.
  • HEXFET® series for high performance.

IRF630NPBF Applications

  • Suitable for power switching circuits.
  • Ideal for general purpose control.
  • Used in high-reliability systems.
  • Component for power management.

IRF630NPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the IRF630NPBF?

The drain-to-source voltage (Vdss) is 200V.

What is the continuous drain current for the IRF630NPBF?

The continuous drain current (Id) at 25°C is 9.3A.

What is the maximum power dissipation of the IRF630NPBF?

The maximum power dissipation is 82W.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C.

What package type is the IRF630NPBF supplied in?

The IRF630NPBF is supplied in a TO-220AB package.

Is the IRF630NPBF RoHS compliant?

The RoHS status is ROHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IRF630NPBF?

The Moisture Sensitivity Level is 1 (Unlimited).

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