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IRF630M The STMicroelectronics IRF630M is an N-Channel Power MOSFET designed with MESH OVERLAY™ technology. It offers a 200V Drain-Source Voltage and a typical RDS(on) of 0.35 Ohms.
Mfr Part #:

IRF630M

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics IRF630M is an N-Channel Power MOSFET designed with MESH OVERLAY™ technology. It offers a 200V Drain-Source Voltage and a typical RDS(on) of 0.35 Ohms.
✓ Total Stock: 2,000 pcs
$ Price Range: $1.67

IRF630M Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Hybrid Electronics ✓
Non-Authorised Inventory information
2,000 pcs
On Request
2000 pcs On Request 1 On Request On Request 846 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRF630M Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IRF630M Description

Short technical summary and product information.

The STMicroelectronics IRF630M is an N-Channel Power MOSFET utilizing the company's consolidated strip layout-based MESH OVERLAY™ process. This technology enhances performance compared to standard parts. It is rated for a Drain-Source Voltage of 200V and features a typical Static Drain-Source On Resistance of 0.35 Ohms at 10V Gate-Source Voltage and 4.5A Drain Current.

 

Key electrical characteristics include a continuous Drain Current of 9A at 25°C case temperature and 5.7A at 100°C. The pulsed Drain Current is rated at 36A. The MOSFET exhibits low intrinsic capacitances and minimized gate charge, contributing to efficient switching.

 

Available in TO-220 and TO-220FP packages, the IRF630M is suitable for applications such as monitor displays and general-purpose switching. Its design emphasizes high dv/dt capability and low on-resistance for reliable performance in demanding environments.

IRF630M Quick Information

Product Type: N-Channel MOSFET
Canonical Name: STMicroelectronics IRF630M N-Channel Power MOSFET
Subcategory: N-Channel

IRF630M Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF630M Estimated Pricing

Qty Low High
1+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF630M Features

  • N-Channel Power MOSFET technology.
  • 200V Drain-Source Voltage rating.
  • Typical 0.35 Ohm RDS(on).
  • 9A continuous drain current.
  • TO-220 and TO-220FP packages.

IRF630M Applications

  • Suitable for monitor displays.
  • Designed for general purpose switching.
  • High dv/dt capability applications.
  • Low intrinsic capacitance designs.

IRF630M FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the IRF630M?

The maximum Drain-Source Voltage is 200V.

What is the typical Static Drain-Source On Resistance of the IRF630M?

The typical Static Drain-Source On Resistance is 0.35 Ohms at VGS = 10V and ID = 4.5A.

What is the continuous Drain Current rating for the IRF630M at 25°C?

The continuous Drain Current is 9A at a case temperature of 25°C.

What package types are available for the IRF630M?

The IRF630M is available in TO-220 and TO-220FP packages.

What is the operating temperature range for the IRF630M?

The storage temperature range is -65 to 150°C, and the maximum operating junction temperature is 150°C.

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