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IRF630A IRF630A is an N-Channel power MOSFET from On Semiconductor with 200V drain-source voltage, 9A continuous drain current, and 400mOhm on-resistance. Housed in a TO-220 through-hole package.
Mfr Part #:

IRF630A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
IRF630A is an N-Channel power MOSFET from On Semiconductor with 200V drain-source voltage, 9A continuous drain current, and 400mOhm on-resistance. Housed in a TO-220 through-hole package.
✓ Total Stock: 6,358 pcs

IRF630A Available from 1 distributor

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Components Technology Group, Inc. ✓
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6,358 pcs
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IRF630A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRF630A Description

Short technical summary and product information.

The IRF630A is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications requiring efficient power management.

 

Key electrical characteristics include a maximum drain-to-source voltage (Vdss) of 200V, continuous drain current (Id) of 9A at Tc=25°C, and a maximum on-resistance (Rds(on)) of 400mOhm at Vgs=10V and Id=4.5A. The device features a gate threshold voltage (Vgs(th)) of 4V maximum at Id=250µA and a maximum gate-to-source voltage of ±30V. Switching performance is supported by a typical gate charge (Qg) of 29nC at Vgs=10V and an input capacitance (Ciss) of 650pF at Vds=25V.

 

The IRF630A is offered in a standard TO-220-3 through-hole package, suitable for easy mounting on heatsinks. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 72W at Tc=25°C.

IRF630A Quick Information

Product Type: Single N-Channel Power MOSFET
Canonical Name: IRF630A N-Channel Power MOSFET
Subcategory: Single MOSFET

IRF630A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF630A Features

  • 200V maximum drain-to-source voltage.
  • 9A continuous drain current rating.
  • 400mOhm on-resistance at 10V gate drive.
  • TO-220 through-hole package for easy mounting.
  • RoHS compliant (unverified).

IRF630A Applications

  • Ideal for DC-DC converter circuits.
  • Used in motor control and drive stages.
  • Suitable for power supply switch applications.
  • Applicable in high-voltage load switching.

IRF630A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IRF630A?

The maximum drain-to-source voltage (Vdss) is 200V.

What is the continuous drain current rating of the IRF630A?

The continuous drain current (Id) is 9A at Tc=25°C.

What is the on-resistance of the IRF630A?

The maximum on-resistance (Rds(on)) is 400mOhm at Vgs=10V and Id=4.5A.

What package does the IRF630A come in?

The IRF630A is available in a TO-220-3 through-hole package.

What is the operating temperature range of the IRF630A?

The operating junction temperature range is -55°C to 150°C.

Is the IRF630A RoHS compliant?

The IRF630A is marked as RoHS3 compliant, but this is unverified.

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