Mfr Part #:

IRF630

Mfr Name: Vishay

The Vishay Dale IRF630 is an N-Channel Power MOSFET designed for commercial-industrial applications. It offers a drain-source voltage of 200V and a continuous drain current of 9.0A.

✓ Total Stock: 2,485 pcs

$ Price Range: $0.71

IRF630 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
ACK ELEKTRONIK ✓ Non-Authorised Inventory information	2,465 pcs On Request	2465 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Speed Components Ltd ✓ Non-Authorised Inventory information	20 pcs On Request	20 pcs	On Request	1	On Request	On Request	726G 26 47	On Request	On Request

IRF630 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Vishay
Gate Charge	23 nC
Mounting Type	Through Hole
Storage Temperature	-55 to +150 °C

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IRF630 Description

Short technical summary and product information.

The Vishay Dale IRF630 is a third-generation N-Channel Power MOSFET featuring fast switching, a ruggedized device design, and low on-resistance. It is housed in a universally preferred TO-220AB package, suitable for power dissipation levels up to approximately 50 W. This MOSFET boasts a drain-source voltage (VDS) of 200V and a typical on-resistance (RDS(on)) of 0.40 Ω at a gate-source voltage (VGS) of 10V. The continuous drain current (ID) is rated at 9.0A at 25°C case temperature.

Key electrical characteristics include a maximum gate charge (Qg max.) of 43 nC. The operating junction and storage temperature range is from -55°C to +150°C. The TO-220AB package offers low thermal resistance and low package cost, contributing to its wide acceptance in commercial-industrial applications. The IRF630 is designed for ease of paralleling and simple drive requirements, making it a cost-effective choice for designers.

This component is suitable for various applications requiring efficient power switching. Its robust design and specifications make it a reliable option for power management circuits. The part is available in lead (Pb)-free and lead (Pb)-free and halogen-free versions, identified by part numbers IRF630PbF and IRF630PbF-BE3 respectively.

IRF630 Quick Information

Product Type: MOSFET

Canonical Name: IRF630 N-Channel Power MOSFET

Subcategory: N-Channel

IRF630 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IRF630 Estimated Pricing

Qty	Low	High
1+	$0.71	$0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF630 Features

200V drain-source voltage rating.
9.0A continuous drain current.
0.40 Ohm typical on-resistance.
TO-220AB package for through-hole mounting.
N-Channel Power MOSFET design.

IRF630 Applications

Suitable for power switching circuits.
Used in commercial-industrial applications.
Designed for ease of paralleling.
Features simple drive requirements.

IRF630 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the IRF630?

The maximum drain-source voltage (VDS) for the IRF630 is 200V.

What is the continuous drain current of the IRF630 at 25°C?

The continuous drain current (ID) for the IRF630 is 9.0A at a case temperature of 25°C.

What is the typical on-resistance of the IRF630?

The typical on-resistance (RDS(on)) of the IRF630 is 0.40 Ω when the gate-source voltage (VGS) is 10V.

What is the package type for the IRF630?

The IRF630 comes in a TO-220AB package.

What is the operating temperature range for the IRF630?

The operating junction and storage temperature range for the IRF630 is -55°C to +150°C.