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IRF630 IRF630 is a 200V, 9A N-Channel MOSFET in a TO-220-3 through-hole package, featuring 400mOhm max on-resistance and 45nC gate charge.
Mfr Part #:

IRF630

Available from 8 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
IRF630 is a 200V, 9A N-Channel MOSFET in a TO-220-3 through-hole package, featuring 400mOhm max on-resistance and 45nC gate charge.
✓ Total Stock: 15,737 pcs
$ Price Range: $1.00 - $2.82

IRF630 Available from 8 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRF630 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRF630 Description

Short technical summary and product information.

The IRF630 is an N-Channel enhancement-mode power MOSFET designed by STMicroelectronics. It offers a drain-to-source voltage rating of 200V and continuous drain current of 9A (Tc). The device achieves a maximum on-state resistance of 400mOhm at 4.5A gate drive of 10V, ensuring efficient power switching. With a maximum gate charge of 45nC at 10V and input capacitance of 700pF, it is suitable for moderate-frequency switching applications.

 

This MOSFET is housed in the industry-standard TO-220-3 through-hole package, which facilitates easy heatsink attachment and heat dissipation. The maximum power dissipation is 75W at case temperature, and the operating junction temperature range spans -65°C to 150°C. The gate threshold voltage is 4V max, and the recommended gate drive voltage is 10V for optimal Rds(on) performance.

 

Typical applications include power supply circuits, motor drivers, and DC-DC converters where high-voltage switching at moderate current levels is required. The through-hole mounting simplifies prototyping and manual assembly. Note that RoHS and REACH compliance statuses are unverified from the provided data.

IRF630 Quick Information

Product Type: Single N-Channel MOSFET
Canonical Name: N-Channel MOSFET, 200V, 9A, TO-220
Subcategory: N-Channel

IRF630 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF630 Estimated Pricing

Qty Low High
1+ $2.82 $2.82
10+ $1.82 $1.82
50+ $1.39 $1.39
100+ $1.25 $1.25
500+ $1.00 $1.00

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF630 Features

  • N-Channel MOSFET with 200V drain-source rating.
  • Continuous drain current of 9A at case temperature.
  • 400mOhm maximum on-resistance at 4.5A, 10V.
  • TO-220-3 through-hole package for easy mounting.
  • 75W maximum power dissipation with heatsinking.

IRF630 Applications

  • Used in power supply and DC-DC converter circuits.
  • Ideal for motor drive and inverter applications.
  • Suitable for high-voltage switching regulator designs.
  • Works in moderate-speed switching power stages.

IRF630 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF630?

200V

What is the continuous drain current?

9A at case temperature (Tc).

What is the on-resistance (Rds(on))?

400 mOhm maximum at 4.5A drain current and 10V gate drive.

What package does the IRF630 come in?

TO-220-3 (through-hole).

What is the operating temperature range?

-65°C to 150°C (junction).

Is the IRF630 RoHS compliant?

RoHS3 compliant per unverified data.

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