| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF6218PBF is a P-Channel Power MOSFET designed for high-efficiency power conversion applications. It is part of Infineon's HEXFET family, offering low gate charge and fast switching performance. Key specifications include a drain-to-source voltage of -150V, continuous drain current of -27A at Tc=25°C, and a maximum on-resistance of 150mOhm at Vgs=-10V. The device features a typical gate charge of 110nC and input capacitance of 2210pF, enabling efficient switching in high-frequency circuits. The MOSFET is housed in a TO-220AB through-hole package, suitable for easy mounting on heatsinks. It is lead-free (PbF) compliant and operates over a junction temperature range of -55°C to 175°C. Typical applications include reset switches for active clamp and DC-DC converters.
The drain-source voltage rating is -150V.
It comes in a TO-220-3 through-hole package (TO-220AB).
The operating junction temperature range is -55°C to 175°C.
The datasheet indicates it is lead-free (PbF), but RoHS compliance is unverified with low confidence.
The gate threshold voltage ranges from -3V to -5V at Id = -250µA.
The maximum power dissipation is 250W at Tc=25°C.