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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF6217TRPBF is a HEXFET power MOSFET from Infineon Technologies, designed for switching applications in DC-DC converters and active clamp reset circuits. It features a P-Channel enhancement mode with a drain-source breakdown voltage of -150V and a continuous drain current of -0.7A at 25°C. The device achieves a maximum on-resistance of 2.4Ω at a gate drive of -10V and a drain current of -0.42A. Gate threshold voltage ranges from -3V to -5V. The MOSFET is characterized for avalanche energy up to 15 mJ and avalanche current up to -1.4A, providing robustness in inductive switching. Dynamic characteristics include a typical gate charge of 6 nC and input capacitance of 150 pF, enabling efficient switching at moderate frequencies. The device is packaged in an 8-SOIC (0.154 inch width) surface-mount package, suitable for automated assembly. It is lead-free and RoHS compliant per the datasheet. Operating junction temperature range is -55°C to 150°C with a maximum power dissipation of 2.5W at 25°C ambient.
-150V.
The device is available in an 8-SOIC (8-SO) surface-mount package.
-55°C to 150°C.
The part is listed as RoHS3 Compliant, though this status is not independently verified.
-0.7A at 25°C ambient.
Maximum 2.4Ω at VGS=-10V and ID=-0.42A.
-3V to -5V.