| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The IRF6216TRPBF is a P-Channel enhancement-mode power MOSFET from Infineon's HEXFET family. It features a maximum drain-to-source voltage of 150V and a continuous drain current rating of 2.2A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 240mΩ at VGS = -10V and ID = -1.3A.
Designed for DC-DC converters and active clamp reset circuits, this MOSFET provides low gate-to-drain charge (15 nC typical) to reduce switching losses. Fully characterized capacitance and avalanche energy (200 mJ single pulse) simplify design for switch-mode power supplies. The gate threshold voltage ranges from -3.0V to -5.0V and the device accepts ±20V gate drive.
Packaged in an industry-standard 8-SOIC (SO-8) surface-mount package with gull wing leads, the IRF6216TRPBF is lead-free and RoHS3 compliant. It is rated for operation from -55°C to +150°C junction temperature with maximum power dissipation of 2.5W at 25°C ambient.
The minimum drain-to-source breakdown voltage is -150V at VGS = 0V, ID = -250µA.
The continuous drain current is -2.2A at Ta = 25°C and -1.9A at Ta = 70°C, with VGS = -10V.
The device is housed in an 8-SOIC (0.154", 3.90mm Width) surface-mount package with a supplier package designation of 8-SO.
The junction temperature range is -55°C to +150°C.
The part is listed as RoHS3 Compliant and lead-free, though this data is unverified and should be confirmed with the manufacturer or distributor.
The total gate charge (Qg) is 49 nC maximum at VGS = -10V, VDS = -120V, ID = -1.3A. The gate-to-source charge is 7.2 nC typical and gate-to-drain charge is 15 nC typical.
The maximum power dissipation is 2.5W at Ta = 25°C.