BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,060 pcs
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1060 pcs | On Request | 1 | On Request | On Request | 07+27 | On Request | On Request |
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| SVHC Present |
The IRF6216PBF is a P-Channel MOSFET manufactured by Vishay Dale, designed for discrete semiconductor applications. It features a maximum drain-source voltage (Vdss) of 150V and can handle a continuous drain current (Id) of 2.2A at 25°C. The on-resistance (Rds On) is specified at a maximum of 240 mOhm under specific gate-source and drain current conditions (1.3A, 10V).
Key electrical characteristics include a gate charge (Qg) of 49nC at 10V and an input capacitance (Ciss) of 1280pF at 25V. The gate threshold voltage (Vgs(th)) is a maximum of 5V at 250µA. The device has a maximum power dissipation of 2.5W.
This MOSFET is packaged in an 8-SOIC (0.154", 3.90mm Width) case and is designed for surface mounting. It is supplied in tube packaging. The RoHS status is listed as RoHS3 Compliant, MSL is 1 Unlimited, and REACH status is REACH Unaffected, though these compliance details are of low confidence due to lack of verification.
This component is suitable for various electronic designs requiring a P-Channel MOSFET with these specific voltage and current ratings, particularly where surface-mount technology is preferred.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 150V.
The continuous drain current is 2.2A at 25°C.
The maximum on-resistance is 240mOhm at 1.3A and 10V gate drive.
The typical gate charge is 49nC at 10V.
The typical input capacitance is 1280pF at 25V.
The maximum gate threshold voltage is 5V at 250µA drain current.
The IRF6216PBF is available in an 8-SOIC surface-mount package.