| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,500 pcs
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5500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The IRF6216PBF is a P-Channel enhancement-mode HEXFET power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications, offering a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 2.2A at 25°C. The device features a maximum on-resistance (Rds(on)) of 240mOhm at Vgs = 10V and Id = 1.3A, enabling low conduction losses.
Key electrical characteristics include a gate threshold voltage range of -3.0V to -5.0V, a maximum gate-source voltage of ±20V, and a total gate charge (Qg) of 33nC typical. The MOSFET is fully characterized for capacitance, including input capacitance (Ciss) of 1280pF and output capacitance (Coss) of 220pF at Vds = 25V. Switching times are specified with typical turn-on delay of 18ns and fall time of 26ns.
The device is housed in an 8-SOIC (SO-8) surface-mount package with gull-wing leads, suitable for automated assembly. It supports an operating junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W at 25°C ambient. The IRF6216PBF is lead-free and RoHS compliant, making it suitable for environmentally conscious designs.
The maximum drain-source voltage (Vdss) is 150V.
The continuous drain current (Id) is 2.2A at Ta = 25°C with Vgs = 10V.
The maximum on-resistance is 240mOhm at Vgs = 10V and Id = 1.3A.
The IRF6216PBF is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, the IRF6216PBF is RoHS3 compliant and lead-free.
The gate threshold voltage ranges from -3.0V (minimum) to -5.0V (maximum) at Id = 250µA.