SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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32 pcs
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32 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The IRF6215S from Vishay Dale is a P-Channel HEXFET Power MOSFET utilizing advanced process technology for high efficiency and reliability. It offers a maximum drain-source voltage (Vds) of -150V and a continuous drain current (Id) of -13A at 25°C.
This MOSFET boasts a low on-resistance (Rds(on)) of 0.29Ω, contributing to reduced power loss during operation. It is designed for a wide operating temperature range from -55°C to +175°C, making it suitable for demanding applications. The device is housed in a surface-mountable D2Pak package, offering high power capability and low internal connection resistance.
Key electrical characteristics include a gate-to-source voltage (Vgs) range of ±20V and a pulsed drain current (Idm) of -44A. The device also features a junction-to-case thermal resistance of 1.4°C/W, enabling effective heat dissipation. Its ruggedized design and fast switching speeds make it a reliable choice for various power electronic applications.
| Qty | Low | High |
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| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-150V
-13A
0.29Ω
-55 to +175°C
D2Pak (5 leads + tab)
RoHS3 Compliant
1 Unlimited
