IRF6215PBF IRF6215PBF is a P-Channel HEXFET Power MOSFET from Infineon Technologies. It features a 150V drain-source breakdown voltage, 13A continuous drain current, and 290mOhm maximum on-resistance.
Mfr Part #:

IRF6215PBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRF6215PBF is a P-Channel HEXFET Power MOSFET from Infineon Technologies. It features a 150V drain-source breakdown voltage, 13A continuous drain current, and 290mOhm maximum on-resistance.
✓ Total Stock: 2,581 pcs

IRF6215PBF Available from 1 distributor

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IRF6215PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF6215PBF Description

Short technical summary and product information.

The IRF6215PBF is a P-Channel HEXFET Power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power management applications requiring a negative voltage supply. The device features a drain-to-source voltage (Vdss) of -150V and a continuous drain current of -13A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 290mOhm at Vgs = -10V and Id = -6.6A, a typical gate charge of 66nC, and fast switching speeds with typical turn-on delay of 14ns and rise time of 36ns. The device is fully avalanche rated with a single pulse avalanche energy rating of 310mJ.

 

The IRF6215PBF is housed in a through-hole TO-220AB package, offering low thermal resistance (junction-to-case 1.4°C/W) for efficient heat dissipation. It operates over a junction temperature range of -55°C to 175°C. The device is lead-free and RoHS compliant.

IRF6215PBF Quick Information

Product Type: Power MOSFET
Series: HEXFET
Canonical Name: IRF6215PBF P-Channel Power MOSFET
Subcategory: Single MOSFET

IRF6215PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRF6215PBF Features

  • P-Channel HEXFET Power MOSFET design.
  • 150V drain-to-source voltage rating.
  • 13A continuous drain current capability.
  • 290mOhm maximum on-resistance at 10V.
  • Through-hole TO-220AB package for easy mounting.

IRF6215PBF Applications

  • Suitable for high-efficiency power switching circuits.
  • Ideal for DC-DC converter and inverter designs.
  • Used in motor control and power management systems.
  • Applicable for load switching and battery protection.

IRF6215PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the IRF6215PBF?

The drain-to-source breakdown voltage is -150V minimum.

What is the maximum continuous drain current?

The continuous drain current is -13A at 25°C case temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 290mOhm at Id = -6.6A and Vgs = -10V.

What package is the IRF6215PBF available in?

It is available in a through-hole TO-220AB package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IRF6215PBF RoHS compliant?

The datasheet indicates the device is lead-free, and the RoHS status is listed as RoHS3 Compliant, though this is unverified.

What is the gate threshold voltage?

The gate threshold voltage ranges from -2.0V to -4.0V at Id = 250µA.

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