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IRF621 The NJS IRF621 is an N-Channel enhancement mode power MOSFET designed for switching applications. It offers a 150V breakdown voltage and 5A continuous drain current.
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IRF621

Available from 1 distributors
Mfr Name: NJS
NJS
The NJS IRF621 is an N-Channel enhancement mode power MOSFET designed for switching applications. It offers a 150V breakdown voltage and 5A continuous drain current.
✓ Total Stock: 15 pcs
$ Price Range: $0.77

IRF621 Available from 1 distributor

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✓ Non-Authorised
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15 pcs
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IRF621 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Input Capacitance
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Operating Temperature
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IRF621 Description

Short technical summary and product information.

The NJS IRF621 is an N-Channel enhancement mode silicon gate power MOSFET. It is designed to withstand a specified level of energy in the breakdown avalanche mode. This device is suitable for applications such as switching regulators, converters, and motor drivers.

 

Key electrical characteristics include a Drain to Source Voltage of 150V and a Continuous Drain Current of 5A at 25°C, reducing to 3A at 100°C. The on-resistance (RDS(on)) is specified as 0.8 Ohms from the datasheet, while the manufacturer page lists a maximum of 290mΩ. It features a Gate to Source Voltage rating of ±20V and a maximum power dissipation of 40W.

 

The IRF621 operates within a temperature range of -55°C to 150°C. It is supplied in a TO-220AB package, designed for through-hole mounting. The device is sensitive to electrostatic discharge, and proper handling procedures should be followed.

IRF621 Quick Information

Product Type: Power MOSFET
Canonical Name: N-Channel Power MOSFET
Subcategory: N-Channel

IRF621 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF621 Estimated Pricing

Qty Low High
1+ $0.77 $0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF621 Features

  • N-Channel enhancement mode MOSFET.
  • 150V Drain to Source Voltage.
  • 5A Continuous Drain Current.
  • 0.8 Ohm on-resistance (datasheet).
  • TO-220AB package for through-hole mounting.

IRF621 Applications

  • Switching regulators and converters.
  • Motor driver applications.
  • High power bipolar transistor drivers.
  • Direct operation from integrated circuits.

IRF621 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain to Source Voltage for the IRF621?

The maximum Drain to Source Voltage (VDS) for the IRF621 is 150V.

What is the continuous drain current of the IRF621 at 25°C?

The continuous drain current (ID) for the IRF621 is 5A at a case temperature of 25°C.

What is the operating temperature range for the IRF621?

The IRF621 can operate between -55°C and 150°C.

What package type is the IRF621 supplied in?

The IRF621 is supplied in a TO-220AB package.

What is the on-resistance (RDS(on)) specified in the datasheet for the IRF621?

The datasheet specifies the on-resistance (RDS(on)) for the IRF621 as 0.8 Ohms.

What is the maximum power dissipation for the IRF621?

The maximum power dissipation for the IRF621 is 40W at 25°C.

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