| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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52 pcs
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52 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale IRF620 is an N-Channel power MOSFET from Vishay's third generation family, designed for fast switching and rugged performance. It features a maximum drain-source voltage (Vdss) of 200V and a continuous drain current of 5.2A at 25°C case temperature.
Key electrical characteristics include a typical on-resistance of 800mOhm (max) at Vgs=10V and Id=3.1A, a maximum gate threshold voltage of 4V at 250µA, and a gate charge of 14nC at Vgs=10V. The device also offers a maximum pulsed drain current of 18A and a power dissipation of 50W at Tc=25°C.
The IRF620 is housed in a standard TO-220AB through-hole package (TO-220-3), suitable for commercial and industrial applications. It operates over a junction temperature range of -65°C to 150°C, and its maximum gate-source voltage rating is ±20V.
200V.
5.2A at Tc=25°C.
Maximum 800mOhm at Id=3.1A and Vgs=10V.
TO-220-3 (TO-220AB), through-hole mounting.
-65°C to 150°C (junction temperature).
Maximum 4V at Id=250µA.
RoHS compliance depends on specific part variant; this datasheet includes RoHS-compliant and non-compliant options.