SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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634 pcs
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634 pcs | On Request | 1 | On Request | On Request | 2001 | On Request | On Request |
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The IRF614 is a third-generation N-Channel Power MOSFET from Infineon Technologies, designed for commercial and industrial applications. It provides a robust combination of fast switching speeds, low on-resistance, and cost-effectiveness.
Key electrical specifications include a maximum drain-source voltage of 250V and a maximum on-resistance of 2.0Ω at a gate-source voltage of 10V. The device features a continuous drain current rating of 2.7A at 25°C case temperature, and a pulsed drain current of up to 8.0A. It also offers a maximum power dissipation of 36W.
Packaged in the widely accepted TO-220AB through-hole package, the IRF614 is suitable for power dissipation levels up to approximately 50W. Its low thermal resistance and package cost contribute to its broad industry acceptance. The operating junction and storage temperature range is from -55°C to +150°C.
This MOSFET is designed with features such as dynamic dV/dt rating, repetitive avalanche rating, fast switching, and ease of paralleling, making it a versatile component for power management circuits.
| Qty | Low | High |
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| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the IRF614 is 250V.
The maximum on-resistance (RDS(on)) for the IRF614 is 2.0Ω when the gate-source voltage is 10V.
The continuous drain current rating for the IRF614 is 2.7A at a case temperature of 25°C.
The maximum power dissipation for the IRF614 is 36W at a case temperature of 25°C.
The IRF614 is available in the TO-220AB package.
The operating junction and storage temperature range for the IRF614 is -55°C to +150°C.
