0402N680F500CG
Walsin Technology
The Walsin Technology 0402N680F500CG is a ceramic capacitor. It features RoHS3 compliance and MSL Level 1.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15,543 pcs
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15543 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
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| Tape & Reel |
The Vishay IRF610S is a third-generation N-Channel Power MOSFET designed for applications requiring a combination of fast switching, ruggedness, and low on-resistance. It is housed in a D2PAK (TO-263) surface mount package, suitable for high current applications.
Key electrical specifications include a maximum drain-source voltage of 200V and a continuous drain current of 3.3A at 25°C case temperature. The on-resistance is 1.5 Ohms at a gate-source voltage of 10V. The MOSFET features a maximum power dissipation of 36W at 25°C case temperature, with a derated value of 3.0W when mounted on a 1" square PCB.
This device is designed for ease of paralleling and simple drive requirements. It also boasts a dynamic dV/dt rating and is repetitive avalanche rated. The operating junction and storage temperature range is from -55°C to +150°C.
The D2PAK package is ideal for surface mounting and can dissipate significant power, making it suitable for various power management tasks. The MOSFET technology ensures efficient power conversion and switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the IRF610S is 200V.
The continuous drain current is 3.3A at 25°C case temperature.
The on-resistance is 1.5 Ohms when the gate-source voltage is 10V.
The IRF610S is available in the D2PAK surface mount package.
The operating junction and storage temperature range is -55°C to +150°C.
