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596 pcs
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596 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The Vishay Siliconix IRF610PBF is a third-generation N-Channel Power MOSFET designed for high performance in commercial and industrial applications. It features a robust design with a 200V drain-source breakdown voltage and a low on-resistance of 1.5Ω at 10V gate-source voltage.
This MOSFET provides a continuous drain current of 3.3A at 25°C case temperature, derating to 2.1A at 100°C. It boasts fast switching speeds and simple drive requirements, making it suitable for various power management tasks. The device is housed in the widely accepted TO-220AB package, known for its low thermal resistance and cost-effectiveness.
Key electrical characteristics include a maximum power dissipation of 36W at 25°C and a gate charge (Qg) of 8.2nC. The operating junction and storage temperature range is from -55°C to +150°C. The IRF610PBF is compliant with RoHS Directive 2002/95/EC.
The maximum drain-source breakdown voltage is 200V.
The continuous drain current is 3.3A at 25°C case temperature.
The typical on-resistance is 1.5Ω when Vgs is 10V and Id is 3.3A.
The IRF610PBF is supplied in a TO-220AB package.
The operating junction and storage temperature range is -55°C to +150°C.
Yes, the IRF610PBF is RoHS3 Compliant.