| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,950 pcs
|
12950 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF610PBF is an N-Channel power MOSFET from Vishay Dale, designed for switching and linear applications. It features a maximum drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 3.3A at Tc=25°C (2.1A at Tc=100°C). The device offers a low on-resistance (RDS(on)) of 1.5Ω maximum at 2A and 10V gate drive, ensuring efficient power handling.
With a gate charge (Qg) of 8.2nC at 10V and input capacitance (Ciss) of 140pF at 25V, the MOSFET provides fast switching performance suitable for high-frequency circuits. It also features a single pulse avalanche energy rating of 64mJ, enhancing ruggedness in inductive load applications.
The device is housed in a TO-220AB (TO-220-3) through-hole package, offering low thermal resistance (junction-to-case 3.5°C/W, junction-to-ambient 62°C/W) and a maximum power dissipation of 36W at Tc=25°C. Operating temperature range is -55°C to 150°C. The IRF610PBF is the lead-free variant, compliant with RoHS3 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.91 | $2.91 |
| 10+ | $1.88 | $1.88 |
| 50+ | $1.43 | $1.43 |
| 100+ | $1.29 | $1.29 |
| 500+ | $1.04 | $1.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 200V.
The continuous drain current is 3.3A at Tc=25°C and 2.1A at Tc=100°C.
The maximum on-resistance (RDS(on)) is 1.5Ω at 2A drain current and 10V gate-source voltage.
The maximum gate threshold voltage (VGS(th)) is 4V at 250µA drain current.
The operating junction temperature range is -55°C to 150°C.
The IRF610PBF is available in a TO-220-3 (TO-220AB) through-hole package.
Yes, the IRF610PBF is RoHS3 compliant as indicated by the lead-free (PbF) suffix, though the certificate is not verified.