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IRF610A The IRF610A is an N-Channel Power MOSFET from On Semiconductor with 200V drain-source voltage and 3.3A continuous drain current. It is housed in a TO-220 through-hole package.
Mfr Part #:

IRF610A

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The IRF610A is an N-Channel Power MOSFET from On Semiconductor with 200V drain-source voltage and 3.3A continuous drain current. It is housed in a TO-220 through-hole package.
✓ Total Stock: 5,570 pcs

IRF610A Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
570 pcs
On Request
570 pcs On Request 1 On Request On Request 0028+ On Request On Request
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IRF610A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRF610A Description

Short technical summary and product information.

The IRF610A is an N-Channel Power MOSFET manufactured by On Semiconductor. It features a drain-source voltage (Vdss) of 200V and a continuous drain current of 3.3A at case temperature. The device utilizes MOSFET (Metal Oxide) technology and offers a maximum drain-source on-resistance of 1.5 Ohm at 10V gate drive and 1.65A drain current.

 

Design engineers will find a gate charge of 10 nC at 10V and input capacitance of 210 pF at 25V, enabling efficient switching in moderate-speed applications. The gate threshold voltage is 4V maximum at 250µA, and the recommended drive voltage is 10V. Maximum power dissipation is 38W at case temperature.

 

The IRF610A is packaged in a TO-220-3 case with through-hole mounting, suitable for easy installation on PCB or heatsink. It operates over a junction temperature range of -55°C to 150°C, making it compatible with industrial and automotive environments.

IRF610A Quick Information

Product Type: N-Channel Power MOSFET
Canonical Name: IRF610A N-Channel Power MOSFET
Subcategory: Single MOSFET

IRF610A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF610A Features

  • 200V drain-source voltage rating.
  • 3.3A continuous drain current.
  • 1.5 Ohm on-resistance at 10V gate drive.
  • Through-hole TO-220-3 package.
  • -55°C to 150°C operating temperature range.

IRF610A Applications

  • Used in power supply switching circuits.
  • Suitable for DC-DC converter designs.
  • Ideal for motor control and inverter stages.

IRF610A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF610A?

200 V maximum.

What is the package type of the IRF610A?

TO-220-3 (through-hole).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the IRF610A RoHS compliant?

RoHS3 compliant (unverified).

What is the gate threshold voltage?

Maximum 4V at 250µA drain current.

What gate drive voltage is recommended?

10V for best performance.

What is the maximum power dissipation?

38W at case temperature.

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