| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,565 pcs
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6565 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF6100PBF is a P-Channel enhancement mode MOSFET designed by Infineon Technologies (originally International Rectifier). It utilizes advanced HEXFET technology to achieve ultra-low on-resistance per footprint area, making it suitable for high-density power management applications.
Key electrical specifications include a maximum drain-source voltage of -20V and a continuous drain current of 5.1A at 25°C ambient temperature. The device features a typical on-resistance of 65mOhm at Vgs = -4.5V and 5.1A, and 95mOhm at Vgs = -2.5V, enabling efficient low-voltage switching. The gate threshold voltage is 1.2V maximum, ensuring compatibility with low-voltage logic.
The MOSFET is packaged in the industry-leading 4-FlipFet surface mount package, which occupies one-third the footprint of a standard SOT-23 package while maintaining a profile under 0.8mm. This makes it ideal for space-constrained designs such as battery packs, mobile phones, and PCMCIA cards. The device is rated for a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 2.2W at 25°C.
The IRF6100PBF comes in a 4-FlipFet surface mount package.
The junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 Compliant, but this is unverified low-confidence data.
The continuous drain current is 5.1A at Ta=25°C with Vgs=-4.5V.
The typical Rds(on) is 65mOhm at Id=5.1A and Vgs=-4.5V.
The maximum gate threshold voltage is 1.2V at Id=250µA.
The typical total gate charge is 14nC at Id=-5.1A and Vds=-16V.