| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,184 pcs
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1184 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Siliconix IRF610 is a third-generation N-Channel Power MOSFET. It is designed to provide a combination of fast switching speeds, rugged device design, low on-resistance, and cost-effectiveness. This MOSFET is suitable for commercial-industrial applications and comes in a universally preferred TO-220AB package.
Key electrical characteristics include a drain-source breakdown voltage (Vds) of 200V and a continuous drain current (Id) of 3.3A at 25°C case temperature. The on-resistance (RDS(on)) is 1.5Ω at a gate-source voltage (Vgs) of 10V. It also features a maximum power dissipation (Pd) of 36W at 25°C case temperature.
The TO-220AB package offers low thermal resistance and is widely accepted in the industry. The device is compliant with RoHS Directive 2002/95/EC. It is rated for repetitive avalanche and features dynamic dV/dt rating and simple drive requirements, making it easy to parallel.
Operating junction and storage temperatures range from -55°C to +150°C. The device is suitable for applications requiring fast switching and robust performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the IRF610 is 200V.
The continuous drain current (Id) for the IRF610 is 3.3A at a case temperature of 25°C.
The on-resistance (RDS(on)) of the IRF610 is a maximum of 1.5Ω when the gate-source voltage (Vgs) is 10V.
The IRF610 is available in the TO-220AB package.
The operating junction and storage temperature range for the IRF610 is -55°C to +150°C.
The IRF610 is listed as RoHS3 Compliant.