Mfr Part #:

IRF610

Mfr Name: Vishay

IRF610 is an N-Channel MOSFET from Vishay Dale with a drain-source voltage of 200V and continuous drain current of 3.3A. Housed in a TO-220AB through-hole package.

✓ Total Stock: 100 pcs

IRF610 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Partservice ✓ Non-Authorised Inventory information	89 pcs On Request	89 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Speed Components Ltd ✓ Non-Authorised Inventory information	11 pcs On Request	11 pcs	On Request	1	On Request	On Request	9648	On Request	On Request

IRF610 Description

Short technical summary and product information.

The IRF610 is an N-Channel enhancement-mode MOSFET designed for general-purpose switching and amplification applications. It features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 3.3A at case temperature (Tc). The device offers a maximum on-resistance (Rds(on)) of 1.5 Ohm at Vgs = 10V and Id = 2A, ensuring efficient power handling.

Gate charge (Qg) is specified at 8.2 nC maximum at Vgs = 10V, and input capacitance (Ciss) is 140 pF maximum at Vds = 25V, indicating moderate switching speeds suitable for medium-frequency circuits. The maximum gate-source voltage (Vgs) is ±20V, and the gate threshold voltage (Vgs(th)) is 4V maximum at Id = 250 µA.

The device is packaged in a TO-220AB (TO-220-3) through-hole package, which provides good thermal dissipation with a maximum power dissipation of 36W at case temperature. The operating junction temperature range is -55°C to +150°C, making it suitable for industrial and automotive environments.

IRF610 Quick Information

Product Type: MOSFET

Canonical Name: IRF610 N-Channel MOSFET, 200V, 3.3A, TO-220AB

Subcategory: Single MOSFET

IRF610 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

IRF610 Features

N-Channel MOSFET with 200V drain-source voltage.
Continuous drain current rated at 3.3A.
Low on-resistance of 1.5 Ohm maximum.
TO-220AB through-hole package for easy mounting.
Wide operating temperature range -55°C to +150°C.

IRF610 Applications

Ideal for general-purpose switching power supplies.
Used in DC-DC converter and inverter circuits.
Suitable for motor control and relay drivers.
Applicable in industrial automation and control systems.

IRF610 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the IRF610?

The drain-source voltage (Vdss) is 200V.

What is the maximum continuous drain current of the IRF610?

The continuous drain current (Id) is 3.3A at case temperature (Tc).

What is the on-resistance of the IRF610?

The maximum on-resistance (Rds(on)) is 1.5 Ohm at Vgs = 10V and Id = 2A.

What package does the IRF610 come in?

The IRF610 is available in a TO-220AB (TO-220-3) through-hole package.

What is the operating temperature range of the IRF610?

The operating junction temperature range is -55°C to +150°C.

What is the maximum gate-source voltage for the IRF610?

The maximum gate-source voltage (Vgs) is ±20V.

What is the maximum power dissipation of the IRF610?

The maximum power dissipation is 36W at case temperature (Tc).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	3.3 A (Tc)
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 25 V
Lead Style	Through Hole
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	36 W (Tc)
Rds On (Max) @ Id, Vgs	1.5 Ohm @ 2 A, 10 V
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4 V @ 250 µA