| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-06-29 21:33:16 |
| Category | |
| Manufacturer Name |
The Vishay Dale IRF5NJ9540 is a P-Channel HEXFET power MOSFET. It is designed using advanced processing techniques to achieve low on-resistance per silicon unit area, combined with fast switching speeds and a ruggedized device design.
Key electrical specifications include a Drain-to-Source Breakdown Voltage (BVDSS) of -100V, a Static Drain-to-Source On-Resistance (RDS(on)) of 0.117Ω at VGS = -10V and ID = -11A, and a Continuous Drain Current (ID) of -18A at TC = 25°C. The device also features a maximum power dissipation of 75W at TC = 25°C and a gate-to-source voltage range of ±20V.
This MOSFET is suitable for a variety of applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high-energy pulse circuits. It is packaged in a surface-mount SMD-0.5 package, making it ideal for compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-100V
0.117 Ohms
-18A
75W
-55 to +150°C
SMD-0.5
RoHS3 Compliant