| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-06-29 21:33:16 |
| Category | |
| Manufacturer Name |
The IRF5N5210 from Vishay Dale is a fifth-generation HEXFET power MOSFET utilizing advanced processing techniques for low on-resistance per silicon unit area. This P-channel MOSFET operates with a BVDSS of -100V and a continuous drain current (ID) of -31A, featuring a maximum RDS(on) of 0.06 Ohms. Its design is optimized for efficiency and includes features like avalanche energy ratings and dynamic dv/dt rating.
This device is hermetically sealed and comes in a surface mount (SMD-1) package, making it suitable for various applications requiring a ruggedized and efficient power solution. The IRF5N5210 is well-suited for use in switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high-energy pulse circuits.
Product validation is qualified according to MIL-PRF-19500 for high-reliability applications. The MOSFET offers simple drive requirements and a light weight construction.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-100V
-31A
0.06 Ohms
SMD-1
1 Unlimited