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IRF5M5210 The Infineon Technologies IRF5M5210 is a P-channel HEXFET Power MOSFET. It features a -100V breakdown voltage and a low on-resistance of 0.07 Ohms.
Mfr Part #:

IRF5M5210

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies IRF5M5210 is a P-channel HEXFET Power MOSFET. It features a -100V breakdown voltage and a low on-resistance of 0.07 Ohms.
✓ Total Stock: 3,165 pcs
$ Price Range: $0.71

IRF5M5210 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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Flip Electronics ✓
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3,165 pcs
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3165 pcs On Request 1 On Request On Request On Request On Request On Request
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IRF5M5210 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IRF5M5210 Description

Short technical summary and product information.

The Infineon Technologies IRF5M5210 is a high-reliability P-channel HEXFET Power MOSFET designed for demanding applications. It offers a breakdown voltage (BVDSS) of -100V and a continuous drain current (ID) of -34A.

 

This MOSFET boasts a maximum on-resistance (RDS(on)) of 0.07 Ohms, ensuring efficient power handling. The device is built using advanced processing techniques for low on-resistance per silicon unit area, combined with fast switching speeds and a ruggedized design.

 

Packaged in a hermetically sealed TO-254AA through-hole package, the IRF5M5210 is suitable for applications requiring high reliability. Its features include avalanche energy ratings and dynamic dv/dt rating, making it a robust choice for various power conversion and control circuits.

 

Potential applications include DC-DC converters, motor drives, switching power supplies, inverters, choppers, and audio amplifiers. The device is qualified according to MIL-PRF-19500 for high-reliability applications.

IRF5M5210 Quick Information

Product Type: Power MOSFET
Series: IRF5M5210
Canonical Name: IRF5M5210 P-channel HEXFET Power MOSFET
Subcategory: Power MOSFET

IRF5M5210 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF5M5210 Estimated Pricing

Qty Low High
1+ $0.71 $0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF5M5210 Features

  • P-channel HEXFET Power MOSFET technology.
  • Rated for -100V drain-source breakdown voltage.
  • Continuous drain current of -34A.
  • Low maximum on-resistance of 0.07 Ohms.
  • Hermetically sealed TO-254AA package.

IRF5M5210 Applications

  • Suitable for DC-DC converters.
  • Ideal for motor drive applications.
  • Used in switching power supplies.
  • Applicable for inverters and choppers.
  • Designed for high-energy pulse circuits.

IRF5M5210 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the IRF5M5210?

-100V

What is the maximum continuous drain current for the IRF5M5210?

-34A

What is the maximum on-resistance of the IRF5M5210?

0.07 Ohms

What is the package type for the IRF5M5210?

TO-254AA

How is the IRF5M5210 mounted?

Through Hole

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