| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
851 pcs
|
851 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Continuous Drain Current (Maximum @ TA = +70 °C, VGS = -4.5 V) | |
| Continuous Drain Current (Maximum @ TA = 25 °C, VGS = -4.5 V) | |
| Current | |
| Drain To Source On Resistance (Maximum @ ID = -2.3 A, VGS = -2.5 V) | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-to-Source Voltage | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction and Storage Temperature Range | |
| Lead Style | |
| Maximum Junction-to-Ambient Thermal Resistance | |
| Mounting Type | |
| Power | |
| Power Dissipation (Maximum @ TA=70 °C) | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF5810 is a dual P-channel HEXFET power MOSFET from Infineon Technologies (formerly International Rectifier). It is designed for battery and load management applications where space is limited. The device integrates two independent P-channel MOSFETs in a single TSOT-23-6 package, providing the functionality of two SOT-23 devices in a smaller footprint.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of -20V, continuous drain current of -2.9A at 25°C (Vgs = -4.5V) and -2.3A at 70°C. The device offers low on-resistance: 90mΩ maximum at Vgs = -4.5V (Id = -2.9A) and 135mΩ maximum at Vgs = -2.5V (Id = -2.3A). The gate threshold voltage range is -0.45V to -1.2V at Id = -250µA. Total gate charge is 9.6nC at Vds = -10V, Vgs = -4.5V, enabling efficient switching.
The device supports logic-level gate drive (2.5V and 4.5V), making it suitable for low-voltage applications. It is surface mounted and available in the TSOT-23-6 thin package. The maximum power dissipation is 960mW at 25°C and 620mW at 70°C. The junction-to-ambient thermal resistance is 130°C/W. The operating junction and storage temperature range is -55°C to +150°C. The IRF5810 is ideal for battery management, load switching, and power distribution in portable electronics. Its dual configuration saves board space and simplifies design.
| Qty | Low | High |
|---|---|---|
| 100+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is -20 V.
The device is available in SOT-23-6 Thin and TSOT-23-6 packages, with a supplier device package of 6-TSOP.
The junction and storage temperature range is -55°C to +150°C.
The IRF5810 is listed as RoHS3 compliant per available data, though verification is recommended.
The continuous drain current is -2.9 A at 25°C (VGS = -4.5V) and -2.3 A at 70°C (VGS = -4.5V).
The maximum drain-to-source on-resistance is 90 mΩ at VGS = -4.5V (ID = -2.9A) and 135 mΩ at VGS = -2.5V (ID = -2.3A).
Yes, the device features logic-level gate capability with a gate threshold voltage range of -0.45V to -1.2V.