| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,235 pcs
|
3235 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
744 pcs
|
744 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel |
The Infineon IRF5803TRPBF is a P-channel HEXFET Power MOSFET designed for efficient battery and load management applications. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
Key electrical characteristics include a Drain-to-Source Voltage of -40V and a maximum Static Drain-to-Source On-Resistance of 112mΩ at VGS = -10V. The continuous drain current is rated at -3.4A at 25°C ambient temperature with VGS = -10V.
This MOSFET is housed in a compact TSOP-6 surface mount package, ideal for applications where printed circuit board space is limited. Its thermal design and R DS(on) reduction enable a significant increase in current handling compared to smaller packages.
The device also features a low gate charge and is available in tape and reel packaging, suitable for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40V
112mΩ
-3.4A
TSOP-6
RoHS3 Compliant
1 Unlimited
-55 to +150°C