| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,234 pcs
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1234 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF5803TRPBF is a P-Channel MOSFET from Infineon Technologies, part of the HEXFET power MOSFET family. It features a maximum drain-source voltage of 40V and a continuous drain current of 3.4A at 25°C ambient temperature. The device offers low on-resistance with a maximum of 112 mΩ at 10V gate drive and 190 mΩ at 4.5V, making it efficient for power management.
This MOSFET is housed in a compact TSOP-6 surface mount package (also known as Micro6), which is a thin SOT-23-6 variant. It is available in tape and reel packaging with 3000 units per reel, suitable for automated assembly. The device is lead-free and halogen-free, complying with current environmental standards.
Applications include battery management, load switching, and power distribution in portable electronics. The low gate charge of 37 nC (max) enables fast switching, and the wide operating junction temperature range of -55°C to 150°C ensures reliability in harsh environments.
It is available in a TSOP-6 surface mount package (also known as Micro6, SOT-23-6 Thin).
The junction temperature range is -55°C to 150°C.
It is marked as RoHS3 compliant and lead-free, though RoHS compliance is unverified.
The maximum drain-source voltage is 40V.
The continuous drain current is 3.4A at 25°C ambient and 2.7A at 70°C.
The gate threshold voltage is -1.0V to -3.0V at 250µA drain current.
The maximum on-resistance is 112 mΩ at 10V gate drive and 3.4A, and 190 mΩ at 4.5V gate drive and 2.7A.