| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF5803D2TRPBF is a P-Channel enhancement-mode MOSFET from Infineon Technologies, part of the FETKY family that integrates a HEXFET power MOSFET with a low forward voltage Schottky rectifier in a single SO-8 package. This device is designed for board space saving in switching regulator and power management applications.
The MOSFET features a maximum drain-to-source voltage of 40V and a continuous drain current of 3.4A at 25°C. On-resistance is a maximum of 112 mOhm at 10V gate drive. The device includes a co-packaged Schottky diode with a maximum average forward current of 3A and a forward voltage drop of 0.51V at 5A.
The IRF5803D2TRPBF is surface mounted in an 8-SOIC package with a customized leadframe for enhanced thermal performance. It is lead-free and RoHS3 compliant.
The maximum drain-source voltage (Vdss) is 40V.
The continuous drain current is 3.4A at 25°C with VGS = -10V.
The maximum on-resistance (Rds on) is 112 mOhm at ID = 3.4A and VGS = 10V.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The operating temperature range is -55°C to 150°C (TJ).
Yes, it is RoHS3 compliant and lead-free.
Yes, it features a co-packaged Schottky diode with a maximum average forward current of 3A.