IRF5801TRPBF

The IRF5801TRPBF is an N-channel power MOSFET from Infineon Technologies. It is designed for power switching applications such as high-frequency DC-DC converters. The device features a minimum drain-to-source breakdown voltage of 200V and continuous drain current ratings of 0.6A at 25°C ambient and 0.48A at 70°C. Maximum on-resistance is specified at 2.2Ω with a 10V gate drive and 360mA drain current.

This HEXFET series MOSFET provides low total gate charge of 3.9nC (maximum) at VGS=10V, which helps reduce switching losses. Dynamic characteristics include typical turn-on delay time of 6.5ns, rise time of 8.0ns, turn-off delay time of 8.8ns, and fall time of 19ns. The part also has fully characterized capacitance values, with input capacitance of 88pF at 25V and output capacitance of 18pF at 25V, along with avalanche energy rating of 9.9mJ and avalanche current rating of 0.6A.

The IRF5801TRPBF comes in a compact Micro6™ (TSOP-6) surface-mount package, which is also referred to as SOT-23-6 Thin or TSOT-23-6. It is lead-free and halogen-free. The device supports an operating junction temperature range from -55°C to +150°C. Maximum power dissipation is 2W at 25°C ambient, with a junction-to-ambient thermal resistance of 62.5°C/W.

With its 200V rating and low on-resistance, the IRF5801TRPBF is suitable for a variety of power conversion circuits, including high-frequency DC-DC converters and other SMPS applications. Its small footprint and surface-mount design make it appropriate for compact electronic assemblies.