| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,500 pcs
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6500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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The IRF540ZSTRRPBF is an N-channel power MOSFET from Infineon Technologies, fabricated using HEXFET advanced process technology. It delivers a drain-source breakdown voltage of 100V and supports a continuous drain current of 36A at Tc=25°C, with 25A at Tc=100°C. The device features an ultra-low maximum on-resistance of 26.5mΩ at Vgs=10V, which helps minimize conduction losses in power circuits.
The MOSFET operates over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 92W at Tc=25°C. Fast switching characteristics and repetitive avalanche capability up to the maximum junction temperature make it suitable for demanding switching applications. Its total gate charge is a maximum of 63nC at Vgs=10V.
The IRF540ZSTRRPBF comes in a TO-263-3 (D2PAK) surface-mount package, providing a compact footprint with efficient thermal performance. The device is lead-free and listed as RoHS3 compliant.
100V.
36A at Tc=25°C, 25A at Tc=100°C.
Maximum 26.5mΩ at Vgs=10V, Id=22A; typical 21mΩ.
-55°C to 175°C junction temperature.
92W at Tc=25°C.
TO-263-3 (D2PAK) surface-mount package.
Yes, it is listed as RoHS3 compliant in the component data.