| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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115 pcs
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115 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale IRF540ZPBF is a HEXFET Power MOSFET utilizing advanced processing techniques for extremely low on-resistance per silicon area. This device is designed for a wide variety of applications requiring efficiency and reliability.
Key electrical characteristics include a Drain-to-Source Breakdown Voltage of 100V and a Static Drain-to-Source On-Resistance as low as 21mΩ typical (26.5mΩ maximum) at VGS = 10V and ID = 25A. The continuous drain current is rated at 36A at TC = 25°C and 25A at TC = 100°C. The operating junction temperature range is -55°C to +175°C.
This MOSFET is available in a TO-220AB package and is suitable for through-hole mounting. Its features include fast switching speeds and improved repetitive avalanche rating, making it a robust choice for power management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 36A at TC = 25°C.
The Drain-to-Source Breakdown Voltage is 100V.
The typical static drain-to-source on-resistance is 21mΩ.
The operating junction and storage temperature range is -55°C to +175°C.
The IRF540ZPBF is available in a TO-220AB package.