| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,020 pcs
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5020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF540ZLPBF is an N-Channel power MOSFET from Infineon Technologies' HEXFET series. It features a drain-source breakdown voltage of 100V and a continuous drain current rating of 36A at 25°C case temperature. The device achieves a maximum on-resistance of 26.5mOhm at 10V gate drive, with a typical value of 21mOhm.
This MOSFET is designed for fast switching applications with typical turn-on delay time of 15ns and rise time of 51ns. It offers a maximum gate charge of 63nC and input capacitance of 1770pF. The device can operate at junction temperatures up to 175°C and supports repetitive avalanche operation.
The IRF540ZLPBF is supplied in a TO-262 package with through-hole mounting. It is lead-free and RoHS3 compliant. This part is suitable for power conversion, motor control, and other high-efficiency switching applications.
| Qty | Low | High |
|---|---|---|
| 306+ | $0.98 | $0.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 100V.
The maximum continuous drain current is 36A at 25°C case temperature and 25A at 100°C.
The maximum on-resistance is 26.5mOhm at 22A drain current and 10V gate-source voltage, with a typical value of 21mOhm.
The IRF540ZLPBF is supplied in a TO-262 package (TO-262-3 Long Leads, I²Pak, TO-262AA) with through-hole mounting.
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 compliant and is lead-free per the datasheet.